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AP Technologies provides UK OEMs, engineers and photonics specialists with access to ultra-high-power InP devices designed for next-generation AI data centres, optical interconnects and advanced silicon photonic systems. As AI infrastructure continues to scale, data centres require higher bandwidth density, stronger optical output power and more efficient light source technologies than traditional copper interconnects or standard transceiver-grade components can deliver.
Through its partnership with SemiNex, AP Technologies offers high-performance indium phosphide device platforms, including high-power O-band DFB lasers, ultra-high-power semiconductor optical amplifiers and RSOA gain chips. These technologies support the development of co-packaged optical engines, silicon photonic integrated circuits and high-speed data centre interconnect architectures.
High-power O-band DFB lasers are suited to intra-data-centre optical links where low chromatic dispersion, stable wavelength performance and strong continuous-wave output are required. SemiNex DFB laser platforms available through AP Technologies provide output power up to 250mW, with future roadmap developments targeting higher-power 400mW and 1W-class devices. These lasers are available in formats suitable for small form factor OEM designs, including bare chip and chip-on-carrier options.
AP Technologies also supplies ultra-high-power semiconductor optical amplifiers for optical signal boosting and power margin recovery in demanding data centre environments. These SOA platforms deliver output power in excess of 1W, with strong power conversion efficiency and broad O-band gain bandwidth. This makes them suitable for scalable WDM systems, multi-channel architectures, co-packaged optics and high-density optical port applications.
For silicon photonic integration, AP Technologies offers InP RSOA gain chips that support external cavity laser designs and direct integration with silicon PIC platforms. RSOAs provide the optical gain required for tunable, coherent and multi-channel photonic systems, while silicon photonics provides integration density, scalability and manufacturing efficiency. Device customisation can also be supported for specific mode-field, geometry and integration requirements.
By working closely with SemiNex, AP Technologies gives UK OEM teams access to early-stage engineering samples, technical support and roadmap insight. This helps reduce integration timescales, qualification risk and development delays for companies designing next-generation optical systems.
These ultra-high-power InP devices are suitable for AI data centre interconnects, co-packaged optics, silicon photonics, lidar, optical sensing, coherent communications, metro access networks and advanced research applications. AP Technologies continues to support customers with practical, high-performance optoelectronic solutions for demanding engineering projects.
By Martin Sharratt, Managing Director, AP Technologies
For more information on Ultra-High-Power InP Devices for Next-Generation AI Data Centres talk to AP Technologies Ltd