ICPMS Metallic Contaminant Analysis

VPD-TXRF & VPD-ICPMS Vapour Phase Decomposition (VPD) TXRF or ICPMS are used to measure ultra low level metallic contaminants on the surface of wafers. For TXRF, the measurement of different elements requires using various X-rays (e.g. Cr, W or Mo excitations) incident at shallow angles (0.1 degree) and detecting the fluorescent X-rays. The VPD technique involves scanning the entire surface of the wafer with a 100µl droplet (HF and H2O2), allowing the droplet to dry and analysing the residue with various X-ray excitations (see figure). The benefit of VPD is that one integrates the entire wafers surface thereby significantly lowering the detection limits.

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